High isolation series-shunt photoconductive microwave switch

A High Isolation Series-Shunt RF MEMS Switch

This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 μs. In order...

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm(2). The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt o...

Design and simulation of a RF MEMS shunt capacitive switch with low actuation voltage, low loss and high isolation

According to contact type, RF MEMS switches are generally classified into two categories: Capacitive switches and Metal-to-Metal ones. The capacitive switches are capable to tolerate a higher frequency range and more power than M-to-M switches. This paper presents a cantilever shunt capacitive RF MEMS switch with characteristics such as low trigger voltage, high capacitive ratio, short switchin...

Microlens coupled interdigital photoconductive switch

Gabor Matthäus, Stefan Nolte, Rico Hohmuth, Martin Voitsch, Wolfgang Richter, Boris Pradarutti, Stefan Riehemann, Gunther Notni, and Andreas Tünnermann Institute of Applied Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, Jena D-07743, Germany BATOP GmbH, Wildenbruchstrasse 15, Jena D-07745, Germany Fraunhofer Institute for Applied Optics and Precision Engineering, Albert-Einstein...

Picosecond Joule heating in photoconductive switch electrodes